NXP Semiconductors PDTD123ET,215

PDTD123ET,215

Manufacturer: NXP Semiconductors
AIBOSI NO: PDTD123ET,215
Package: TO-236-3, SC-59, SOT-23-3
Datasheet: -
Stock: 44320000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount TO-236AB
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SPECIFICATIONS

Parameters
Mfr	NXP Semiconductors
Series	PDTD123E
Package	Bulk
Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB
RoHS Status	RoHS non-compliant
REACH Status	Vendor Undefined
Other Names	2156-PDTD123ET,215-954
Standard Package	1