Diodes Incorporated DMG8N65SCT

DMG8N65SCT


  • Manufacturer: Diodes Incorporated
  • AIBOSI NO: DMG8N65SCT
  • Package: TO-220-3
  • Datasheet: -
  • Stock: 12390000
  • Description: N-Channel 650 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
  • Price:

Quantity:

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1217 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number DMG8N65
RoHS Status ROHS3 Compliant
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 8A (Tc) 125W (Tc) Through Hole TO-220AB

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