Rohm Semiconductor DTC123JSATP

DTC123JSATP


  • Manufacturer: Rohm Semiconductor
  • AIBOSI NO: DTC123JSATP
  • Package: SC-72 Formed Leads
  • Datasheet:
  • Stock: 76350000
  • Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole SPT
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Rohm Semiconductor
Series -
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 300 mW
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT
Base Product Number DTC123
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 5,000
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole SPT

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