Goford Semiconductor G12P10KE

G12P10KE


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G12P10KE
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 500000
  • Description: P-Channel 100 V 12A (Tc) 57W (Tc) Surface Mount TO-252
  • Price: $0.08

Quantity:

Unit Price: $0.0810

Ext Price: $0.0810

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series G
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1720 pF @ 50 V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
Standard Package 2,500
P-Channel 100 V 12A (Tc) 57W (Tc) Surface Mount TO-252

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In Stock

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