Central Semiconductor Corp CDM22010-650

CDM22010-650

Manufacturer: Central Semiconductor Corp
AIBOSI NO: CDM22010-650
Package: TO-220-3
Datasheet: -
Stock: 98790000
Description: N-Channel 650 V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220-3
Price:

Quantity:

Add to RFQ list

In Stock

Please send RFQ , we will respond immediately.

Company Name

Contact Name

Business Email

Quantity

Purchase & Inquiry

Transport

Packing

Shipping

Payment

Purchase

You may place an order without registering to AIBOSI.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.

SPECIFICATIONS

Parameters
Mfr	Central Semiconductor Corp
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	30V
Input Capacitance (Ciss) (Max) @ Vds	1168 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Other Names	1514-CDM22010-650
Standard Package	1