Infineon Technologies BCR133WH6327

BCR133WH6327


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: BCR133WH6327
  • Package: SC-70, SOT-323
  • Datasheet:
  • Stock: 64580000
  • Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SOT323-3-1
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series -
Package Bulk
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 130 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3-1
Base Product Number BCR133
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 7,123
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SOT323-3-1

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