Toshiba Semiconductor and Storage RN1313(TE85L,F)

RN1313(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: RN1313(TE85L,F)
Package: SC-70, SOT-323
Datasheet:
Stock: 62420000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount SC-70
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250 MHz
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70
Base Product Number	RN1313
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Standard Package	3,000