Infineon Technologies IRF3415L

IRF3415L


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRF3415L
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Datasheet:
  • Stock: 81560000
  • Description: N-Channel 150 V 43A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF3415L
Standard Package 50
N-Channel 150 V 43A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262

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In Stock

Please send RFQ , we will respond immediately.