Goford Semiconductor GC11N65F

GC11N65F


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: GC11N65F
  • Package: TO-220-3 Full Pack
  • Datasheet:
  • Stock: 200000
  • Description: N-Channel 650 V 11A 31.3W Through Hole TO-220F
  • Price: $0.37

Quantity:

Unit Price: $0.3720

Ext Price: $0.3720

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
Power Dissipation (Max) 31.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 11A 31.3W Through Hole TO-220F

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