Toshiba Semiconductor and Storage 2SC5200-O(Q)

2SC5200-O(Q)

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: 2SC5200-O(Q)
Package: TO-3PL
Datasheet:
Stock: 14050000
Description: Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Price: $1.53

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Unit Price: $1.5300

Ext Price: $1.5300

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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	230 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	150 W
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(L)
Base Product Number	2SC5200
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0075
Standard Package	100