Goford Semiconductor GT023N10M

GT023N10M


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: GT023N10M
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 91580000
  • Description: N-Channel 100 V 140A (Tc) 500W (Tc) Surface Mount TO-263
  • Price: $1.11

Quantity:

Unit Price: $1.1098

Ext Price: $1.1098

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Other Names 3141-GT023N10MTR
Standard Package 800
N-Channel 100 V 140A (Tc) 500W (Tc) Surface Mount TO-263

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