Goford Semiconductor G110N06K

G110N06K


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G110N06K
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet:
  • Stock: 400000
  • Description: N-Channel 60 V 110A (Tc) 160W (Tc) Surface Mount TO-252
  • Price: $0.17

Quantity:

Unit Price: $0.1700

Ext Price: $0.1700

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5538 pF @ 25 V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 60 V 110A (Tc) 160W (Tc) Surface Mount TO-252

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In Stock

Please send RFQ , we will respond immediately.