Toshiba Semiconductor and Storage TRS2E65H,S1Q

TRS2E65H,S1Q


  • Manufacturer: Toshiba Semiconductor and Storage
  • AIBOSI NO: TRS2E65H,S1Q
  • Package: TO-220-2
  • Datasheet: -
  • Stock: 3000000
  • Description: Diode 650 V 2A Through Hole TO-220-2L
  • Price: $0.78

Quantity:

Unit Price: $0.7750

Ext Price: $0.7750

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SPECIFICATIONS

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 2 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Capacitance @ Vr, F 135pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction 175°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 264-TRS2E65H,S1Q
Standard Package 50
Diode 650 V 2A Through Hole TO-220-2L

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