Goford Semiconductor G080P06M

G080P06M


  • Manufacturer: Goford Semiconductor
  • AIBOSI NO: G080P06M
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Datasheet:
  • Stock: 90000
  • Description: P-Channel 195A (Tc) 294W (Tc) Surface Mount TO-263
  • Price: $0.40

Quantity:

Unit Price: $0.4005

Ext Price: $0.4005

In Stock

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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr Goford Semiconductor
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15870 pF @ 30 V
FET Feature -
Power Dissipation (Max) 294W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Other Names 4822-G080P06MTR
Standard Package 1,600
P-Channel 195A (Tc) 294W (Tc) Surface Mount TO-263

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