Infineon Technologies IRFBA90N20DPBF

IRFBA90N20DPBF


  • Manufacturer: Infineon Technologies
  • AIBOSI NO: IRFBA90N20DPBF
  • Package: TO-273AA
  • Datasheet:
  • Stock: 34290000
  • Description: N-Channel 200 V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA)
  • Price:

Quantity:

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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SPECIFICATIONS

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 59A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6080 pF @ 25 V
FET Feature -
Power Dissipation (Max) 650W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package SUPER-220™ (TO-273AA)
Package / Case TO-273AA
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 200 V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA)

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