NXP USA Inc. PDTA123JK,115

PDTA123JK,115


  • Manufacturer: NXP USA Inc.
  • AIBOSI NO: PDTA123JK,115
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet:
  • Stock: 46270000
  • Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Surface Mount SMT3; MPAK
  • Price:

Quantity:

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SPECIFICATIONS

Parameters
Mfr NXP USA Inc.
Series -
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SMT3; MPAK
Base Product Number PDTA123
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 9,000
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Surface Mount SMT3; MPAK

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