NXP USA Inc. PDTC123JK,115

PDTC123JK,115

Manufacturer: NXP USA Inc.
AIBOSI NO: PDTC123JK,115
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 75400000
Description: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount SMT3; MPAK
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FedEx International, 5-7 business days.

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SPECIFICATIONS

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SMT3; MPAK
Base Product Number	PDTC123
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000