Toshiba Semiconductor and Storage 2SA1721RTE85LF

2SA1721RTE85LF

Manufacturer: Toshiba Semiconductor and Storage
AIBOSI NO: 2SA1721RTE85LF
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 48980000
Description: Bipolar (BJT) Transistor PNP 300 V 100 mA 50MHz 150 mW Surface Mount S-Mini
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SPECIFICATIONS

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA, 10V
Power - Max	150 mW
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Base Product Number	2SA1721
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000